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Reflective Photosensors (Photo Reflectors)
CNB2301 (ON2270)
Reflective Photosensor
Overview
CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor used as the photo detector in a single resin package.
Unit : mm
Mark for indicating anode side C0.5 1 3
9.01.0
2.00.2
Chip center
Features
Ultraminiature : 2.7 x 3.4 mm Visible light cutoff resin is used High current-transfer ratio
9.01.0
2.70.2 0.4
4-0.7 4-0.5 0.1 2 1.8 4
2.00.2
0.5 0.15
Applications
Detection of paper, film and cloth Detection of rotary positioning Detection of position and edge Liquid level sensor
1.50.2
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25C)
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature Operating ambient temperature Storage temperature Reverse voltage (DC) Symbol Ratings VR IF PD*1 IC VCEO VECO PC*2 Topr 3 50 75 30 20 5 75 -25 to +85 Unit V mA mW mA V V mW C C
*1
Tstg -30 to +100
Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.0 mW/C at Ta 25C.
Electrical Characteristics (Ta = 25C)
Parameter Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals Output characteristics Collector cutoff current Collector current Leakage current Transfer characteristics Response time
*1 I
Symbol VF IR Ct ICEO ID tr
*3 ,
Conditions IF = 50mA VR = 3V VR = 0V, f = 1MHz VCE = 10V
min
IC*1, *2 VCC = 5V, IF = 2mA, RL = 100, d = 1mm VCC = 5V, IF = 2mA, RL = 100
*4
0.46 150
tf
VCC = 10V, IC = 1mA, RL = 100
*2 Output
Collector to emitter saturation voltage VCE(sat) IF = 5mA, IC = 0.5mA
C
classifications Class IC (mA) Q 0.46 to 1.75 R 1.3 to 4.95 S 3.15 to 12.0
current measurement method
*3 Time
Note) The part number in the parenthesis shows conventional part number.
;; ;;
IF IC RL VCC
required for the output current to increase from 10% to 90% of its final value *4 Time required for the output current to decrease from 90% to 10% of its initial value
; ;;
1 23 4 Pin connection
3.40.3
typ 1.3 0.01 30
max 1.5 10 1.0 12.0 2.0 1.5
Unit V A pF A mA A s V
; ;;; ; ;;; ;;; ;;;
Evaporated Al Glass plate (t = 1mm)
1
CNB2301
Reflective Photosensors (Photo Reflectors)
IF , IC -- Ta
60 60
IF -- V F
1.6 Ta = 25C
VF -- Ta
IF , IC (mA)
50
IF
50
IF = 50mA
IF (mA)
VF (V)
1.2
10mA
Forward current, collector current
40 IC
40
Forward current
Forward voltage
1mA 0.8
30
30
20
20
0.4
10
10
0 - 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Forward voltage VF (V)
Ambient temperature Ta (C )
IC -- I F
10 3 VCC = 5V Ta = 25C RL = 100 d = 1mm 10 2
IC -- VCE
160 Ta = 25C VCC = 5V IF = 2mA RL = 100 120
IC -- Ta
IC (mA)
10 2
IC (mA)
10
IF = 10mA
10
1 2mA
Relative output current
10 2
5mA
Collector current
Collector current
IC (%)
80
1
10 -1
1mA
40
10 -1
1
10
10 2
10 3
10 -2 10 -1
1
10
0 - 40 - 20
0
20
40
60
80
100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
10 2 VCE = 10V 10 4
tr -- IC
VCC = 10V Ta = 25C 100
IC -- d
80
ICEO (A)
10
10 3
RL = 1k 500 100
tr (s)
Relative output current
60
Dark current
Rise time
1
10 2
40
10 -1
10
20
10 -2 - 40 - 20
0
20
40
60
80
100
1 10 -2
10 -1
1
10
0
0
Ambient temperature Ta (C )
Collector current IC (mA)
2
; ;;
d 2 4 6 8 10
VCC = 5V IF = 2mA
IC (%)
Distance d (mm)
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR

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